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Materials

Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2

Beteiligte Autoren der JOANNEUM RESEARCH:
Autor*innen:
Timm, R.; Fian, A.; Hjort, M.; Thelander, C.; Lind, E.; Andersen, J. N.; Wernersson, L.-E.; Mikkelsen, A.
Abstract:
Thin high-κ oxide films on InAs, formed by atomic layer deposition, are the key to achieve high-speed metal-oxide-semiconductor devices. We have studied the native oxide and the interface between InAs and 2 nm thick Al2O3 or HfO2 layers using synchrotron x-ray photoemission spectroscopy. Both films lead to a strong oxide reduction, obtaining less than 10% of the native As-oxides and between 10% and 50% of the native In-oxides, depending on the deposition temperature. The ratio of native In- to As-oxides is determined to be 2:1. The exact composition and the influence of different oxidation states and suboxides is discussed in detail.
Titel:
Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
Seiten:
132904
Publikationsdatum
2010-09

Publikationsreihe

Nummer
97
Beitrag
13
ISSN
0003-6951
Proceedings
Applied Physics Letters

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