Structural and Electrical Properties of Polymorphic Pentacene Thin Films

Publication from Materials

Stadlober B., Satzinger V., Maresch H., Somitsch D., Haase A., Pichler H., Rom W., Jakopic G.

Proc. of the SPIE Vol. 5217, 112-23, (2003) Proceedings of SPIE Vol. 5217 Organic Field Effect Transistors II. CD Dimitrakopoulos, A Dodabalapur (Eds.):112-23, 2003


Due to its outstanding carrier transport capabilities the aromatic hydrocarbon pentacene is still one of the most promising out of all organic semiconducting materials investigated so far. Pentacene appears in several polymorphic structures that significantly differ with respect to the d(001) spacing. It is shown, that precise control of the epitaxial growth process of thin films enables not only to adjust the formation of the polymorphic phases, but also to influence grain size and shape. The relative volume fraction of the pentacene polymorphs is determined by several parameters which are substrate material, deposition rate, film thickness and substrate temperature. A comparison of X-ray diffraction and Raman measurements reveals that the phase with the smaller layer-by-layer spacing grows on top of the other. Moreover, there is a strict correlation between evaporation rate and maximum grain size. In addition to structural we also investigated the electrical properties of pentacene thin films focussing on polymorphism and its influence on the transport properties. Apart from the fact that the charge carrier mobility is strongly influenced by the grain size it turned out that the bulk phase is related to a lower intrinisic mobility than the thin film phase.

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