In-situ production, electrical and surface analytical characterization
of novel organic thin film transistors

The goal of this basic research project is to find correlations between the electrical properties of organic thin-film transistors (OTFTs) and the mechanisms operating during the growth of the film on the organic semiconductor or the metal electrodes. This is achieved by

  • In-situ electrical measurement of OTFT during the vapor deposition of organic semiconductors or source and drain electrodes
  • In parallel, surface analysis of electrically measured components to accurately determine the film morphology and growth
  • Conducting investigations on different dielectrics, organic semiconductors (n-type and p-type semiconductors) and electrode materials
  • Conducting the first basic experiments on the film growth of hydrogen-bonded organic semiconductors as potential ambipolar materials
  • Applying these findings for the further optimization of OTFTs

The insituOTFT project is carried out in cooperation with the Technical University of Graz, Institute of Solid State Physics. Here, in addition to the in-situ electrical characterization, surface-sensitive analysis (e.g., TDS: thermal desorption spectroscopy, Auger electron spectroscopy) for the basic study of the film growth of organic semiconductors is performed.